Optimal Design of Large Signal and Noise Performance of GaN/SiC Hetero-Structural IMPATT Diodes Based on QCDD Model

von Zheng, J. D.
Veröffentlicht in Asia-Pacific Conference on Silicon Carbide and Related Materials (2019 : Peking) Materials for electronics: silicon carbide and related materials (2020)

Simulation on Large Signal and Noise Properties of (n)Si/(p)SiC Heterostructural IMPATT Diodes

von Zheng, J. D.
Veröffentlicht in Asia-Pacific Conference on Silicon Carbide and Related Materials (2018 : Peking) Semiconductors: silicon carbide and related materials (2019)

Optimal Design of Large Signal Performance of AIN/GaN Hetero-Structural IMPATT and MITATT Diodes

von Wu, P.
Veröffentlicht in Asia-Pacific Conference on Silicon Carbide and Related Materials (2019 : Peking) Materials for electronics: silicon carbide and related materials (2020)

Effect of Tunneling on Small Signal Characteristics of IMPATT Diodes with SiC Heteropolytype Structures

von He, M. C.
Veröffentlicht in Asia-Pacific Conference on Silicon Carbide and Related Materials (2018 : Peking) Semiconductors: silicon carbide and related materials (2019)