Enhancement of Minority Carrier Lifetime in Ultra-High Voltage 4H-SiC PiN Diodes by Carbon-Film Annealing

von Zhang, W. T.
Veröffentlicht in Asia-Pacific Conference on Silicon Carbide and Related Materials (2019 : Peking) Materials for electronics: silicon carbide and related materials (2020)

Low Defect Thick Homoepitaxial Layers Grown on 4H-SiC Wafers for 6500 V JBS Devices

von Niu, Y. X.
Veröffentlicht in Asia-Pacific Conference on Silicon Carbide and Related Materials (2018 : Peking) Semiconductors: silicon carbide and related materials (2019)