Effect of Ge incorporation on stoichiometric composition of 3C-SiC thin films grown on Si(111) substrates

Veröffentlicht in Physica status solidi / C (2005)

Germanium Incorporation in Silicon Carbide Epitaxial Layers Using Molecular Beam Epitaxy on 4H-SiC Substrates

von Pezoldt, Jörg
Veröffentlicht in European Conference on Silicon Carbide and Related Materials (12. : 2018 : Birmingham) Silicon carbide and related materials 2018 (2019)

Raman studies of Ge-promoted stress modulation in 3C-SiC grown on Si(111)

Veröffentlicht in Applied physics letters (2005)

Ge-modified Si(100) substrates for the growth of 3C-SiC(100)

Veröffentlicht in Applied physics letters (2006)

The role of Ge predeposition temperature in the MBE epitaxy of SiC on silicon

Veröffentlicht in Physica status solidi / C (2004)