Improvement of Switching Characteristics in 6.5-kV SiC IGBT with Novel Drift Layer Structure

von Watanabe, N.
Veröffentlicht in European Conference on Silicon Carbide and Related Materials (12. : 2018 : Birmingham) Silicon carbide and related materials 2018 (2019)

Undoped FDSOI (Silicon on Thin Buried Oxide) Solves Variability Problem of Scaled CMOS

von Sugii, N.
Veröffentlicht in Handōtai, Shuseki-Kairo-Gijutsu-74.-Shinpojiumu-kōen-ronbunshū (2010)

Steady-State and Transient Experiments in Mock-Up of J-PARC LBE Spallation Target System Using Mockup Loop "IMMORTAL"

von Obayashi, H.
Veröffentlicht in NURETH (18. : 2019 : Portland, Or.) 18th International Topical Meeting on Nuclear Reactor Thermal Hydraulics 2019 (NURETH 2019) ; Volume 1 of 9 (2020)