Comparison of Ranges for Al Implantations into 4H-SiC (0001) Using Channeled Ions and an Ion Energy in the Bethe-Bloch Region

von Mochizuki, K.
Veröffentlicht in European Conference on Silicon Carbide and Related Materials (12. : 2018 : Birmingham) Silicon carbide and related materials 2018 (2019)

Effect of HCL on Surface Free Energy of SiC during CVD Trench Filling

von Mochizuki, K.
Veröffentlicht in European Conference on Silicon Carbide and Related Materials (12. : 2018 : Birmingham) Silicon carbide and related materials 2018 (2019)

Initiation of Shockley Stacking Fault Expansion in 4H-SiC P-i-N Diodes

von Okada, A.
Veröffentlicht in European Conference on Silicon Carbide and Related Materials (12. : 2018 : Birmingham) Silicon carbide and related materials 2018 (2019)

Crystalline Quality Evaluation of SiC p/n Column Layers Formed by Trench-Filling-Epitaxial Growth

von Adachi, K.
Veröffentlicht in International Conference on Silicon Carbide and Related Materials (18. : 2019 : Kyōto) Silicon carbide and related materials 2019 (2020)

Return reversals in the Tokyo Stock Exchange : a test of stock market overreaction

von Gunaratne, P. S. M.
Veröffentlicht in Japan and the world economy (1997)

20 kV-Class Ultra-High Voltage 4H-SiC n-IE-IGBTs

von Koyama, A.
Veröffentlicht in International Conference on Silicon Carbide and Related Materials (18. : 2019 : Kyōto) Silicon carbide and related materials 2019 (2020)