Properties of a Tantalum Nitride Source Ta(N-t-C5H11)[N(CH3)2]3 for MOCVD

von Yasuhara, S.
Veröffentlicht in Handōtai-Shūseki-Kairo-Gijutsu-Shinpojiumu (66 : 2004 : Tokio) Handōtai, Shuseki-Kairo-Gijutsu-66.-Shinpojiumu-kōen-ronbunshū (2004)

Reactive Force-Field Molecular Dynamics Study of SiGe Thin Film Growth in Plasma Enhanced Chemical Vapor Deposition Processes

von Uene, N.
Veröffentlicht in Pacific Rim Meeting on Electrochemical and Solid State Science (2020 : Online) (9.) SiGe, Ge, and Related Compounds: Materials, Processing, and Devices 9 (2020)