Effect of the Field Oxidation Process on the Electrical Characteristics of 6500V 4H-SiC JBS Diodes

von Sang, L.
Veröffentlicht in Asia-Pacific Conference on Silicon Carbide and Related Materials (2019 : Peking) Materials for electronics: silicon carbide and related materials (2020)

The Effect on the Interface and Reliability of SIC MOS by Ar/O2 Annealing

von Luo, Z. P.
Veröffentlicht in Asia-Pacific Conference on Silicon Carbide and Related Materials (2019 : Peking) Materials for electronics: silicon carbide and related materials (2020)

Enhancement of Minority Carrier Lifetime in Ultra-High Voltage 4H-SiC PiN Diodes by Carbon-Film Annealing

von Zhang, W. T.
Veröffentlicht in Asia-Pacific Conference on Silicon Carbide and Related Materials (2019 : Peking) Materials for electronics: silicon carbide and related materials (2020)

An Improved 4H-SiC Trench Gate MOSFETs Structure with Low On-Resistance and Reduced Gate Charge

von Tian, K.
Veröffentlicht in Asia-Pacific Conference on Silicon Carbide and Related Materials (2018 : Peking) Semiconductors: silicon carbide and related materials (2019)

An Optimized p* Shielding 4H-SiC Trench Gate MOSFETs Structure with Floating Regions

von Tian, K.
Veröffentlicht in Asia-Pacific Conference on Silicon Carbide and Related Materials (2018 : Peking) Semiconductors: silicon carbide and related materials (2019)

Thermodynamic Calculation of the Liquidus Projections of the Al-Cu-Fe-Mg, Al-Cu-Mg-Si, and Al-Fe-Mg-Si Quaternary Systems on Al-Rich Corner

von Zhao, J. R.
Veröffentlicht in Chinese Materials Conference (20. : 2019 : Chengdu) Functional and functionally structured materials IV ; Part 2 (2020)

Thermodynamic Calculation of the Liquidus Projections of the Al-Cu-Fe-Si and Al-Cu-Fe-Mg-Si Multicomponent Systems on Al-Rich Side

von Zhao, J. R.
Veröffentlicht in Chinese Materials Conference (20. : 2019 : Chengdu) Functional and functionally structured materials IV ; Part 2 (2020)

Design and Fabrication of Non-Uniform Spacing Multiple Floating Field Limiting Rings for 6500V 4H-SiC JBS Diodes

von Sang, L.
Veröffentlicht in Asia-Pacific Conference on Silicon Carbide and Related Materials (2019 : Peking) Materials for electronics: silicon carbide and related materials (2020)