Crystallization inside high magnetic DC fields: experiments regarding BHF as a model material between 0 and 5 T, and 800 to 1400 °C

Veröffentlicht in Mechanical engineering from macro to nano (2005)

Crystallization inside high magnetic DC fields: experiments regarding BHF as a model material between 0 and 5 T, and 800 to 1400 °C

Veröffentlicht in Technische Universität Ilmenau. Fakultät für Maschinenbau Tagungsunterlagen (2005)

Effect of Ge incorporation on stoichiometric composition of 3C-SiC thin films grown on Si(111) substrates

Veröffentlicht in Physica status solidi / C (2005)

Growth of 3C-(Si1-xC1-y)Gex+y layers on 4H-SiC by molecular beam epitaxy

Veröffentlicht in Silicon carbide and related materials 2004 (2005)

Germanium Incorporation in Silicon Carbide Epitaxial Layers Using Molecular Beam Epitaxy on 4H-SiC Substrates

von Pezoldt, Jörg
Veröffentlicht in European Conference on Silicon Carbide and Related Materials (12. : 2018 : Birmingham) Silicon carbide and related materials 2018 (2019)

High-resolution XRD investigations of the strain reduction in 3C-SiC thin films grown on Si (111) substrates

Veröffentlicht in Silicon carbide and related materials 2002 (2003)

3C-SiC:Ge alloys grown on Si (111) substrates by SSMBE

Veröffentlicht in Physica status solidi / C (2004)

The role of Ge predeposition temperature in the MBE epitaxy of SiC on silicon

Veröffentlicht in Physica status solidi / C (2004)