E-Mode AlGaN/GaN HEMTs Using p-NiO Gates

von Chiang, C. C.
Veröffentlicht in Symposium "Wide-Bandgap Semiconductor Materials and Devices" (25. : 2024 : San Francisco, Calif.) Wide-Bandgap Semiconductor Materials and Devices 25 (2024)

Operation up to 225°C of NiO/ β-(Al0.21Ga0.79)2O3 /Ga2O3 Heterojunction Lateral Rectifiers

von Wan, H. H.
Veröffentlicht in Symposium "Wide-Bandgap Semiconductor Materials and Devices" (25. : 2024 : San Francisco, Calif.) Wide-Bandgap Semiconductor Materials and Devices 25 (2024)