Reliability of 4H-SiC (0001) MOS Gate Oxide by NO Post-Oxide-Annealing

von Xu, H. Y.
Veröffentlicht in Asia-Pacific Conference on Silicon Carbide and Related Materials (2018 : Peking) Semiconductors: silicon carbide and related materials (2019)

The Correlation between the Reduction of Interface State Density at the SiO2/SiC Interface and the NO Post-Oxide-Annealing Conditions

von Xu, H. Y.
Veröffentlicht in Asia-Pacific Conference on Silicon Carbide and Related Materials (2018 : Peking) Semiconductors: silicon carbide and related materials (2019)

Improved Electrical Properties of 4H-SiC MOS Devices with High Temperature Thermal Oxidation

von Xu, H. Y.
Veröffentlicht in Asia-Pacific Conference on Silicon Carbide and Related Materials (2018 : Peking) Semiconductors: silicon carbide and related materials (2019)

Effect of Grinding-Induced Stress on Interface State Density of SiC/SiO2

von Wang, S. H.
Veröffentlicht in Asia-Pacific Conference on Silicon Carbide and Related Materials (2018 : Peking) Semiconductors: silicon carbide and related materials (2019)

Investigation of N/AI/Ti Ohmic Contact on N-Type 4H-SiC

von Xue, M. Q.
Veröffentlicht in National Contact Point Energy (2020 : Dnjepr) Actual challenges in materials science and processing technologies II (2021)

The Effect on the Interface and Reliability of SIC MOS by Ar/O2 Annealing

von Luo, Z. P.
Veröffentlicht in Asia-Pacific Conference on Silicon Carbide and Related Materials (2019 : Peking) Materials for electronics: silicon carbide and related materials (2020)