3x 10/18 - 1 x 10/19 cm - 3 AI+ Ion Implanted 4H-SiC: Annealing Time Effect

von Nipoti, R.
Veröffentlicht in International Conference on Silicon Carbide and Related Materials (18. : 2019 : Kyōto) Silicon carbide and related materials 2019 (2020)

Ion Implanted Phosphorous for 4H-SiC VDMOSFETSs Source Regions: Effect of the Post Implantation Annealing Time

von Nipoti, R.
Veröffentlicht in International Conference on Silicon Carbide and Related Materials (18. : 2019 : Kyōto) Silicon carbide and related materials 2019 (2020)