Evaluation of Gate Oxide Lifetime under Constant-Voltage Stress by Charge-to-breakdown

von Eguchi, K.
Veröffentlicht in Handōtai-Shūseki-Kairo-Gijutsu-Shinpojiumu (48 : 1995 : Tokio) 48. Handōtai Shuseki Kairo Gijutsu Shinpojiumu Kōen Ronbunshū (1995)

Reliability Evaluation of Gate Oxide Damage by Plasma Process

von Uraoka, Y.
Veröffentlicht in Handōtai, Shūseki Kairo Gijutsu Shinpojiumu (44. : 1993 : Tokio) Handōtai, Shūseki Kairo Gijutsu Dai 44kai Shinpojiumu (1993)

Evaluation of MOSFET Transconductance Degradation during Plasma Processing

von Eriguchi, K.
Veröffentlicht in Handōtai-Shūseki-Kairo-Gijutsu-Shinpojiumu (46 : 1994 : Tokio) 46. Handōtai Shuseki Kairo Gijutsu Shinpojiumu Kōen Ronbunshū (1994)

Evaluation of Gate Oxide Damage due to Antenna Effect by the Qs» Method

von Eriguchi, K.
Veröffentlicht in Handōtai, Shūseki Kairo Gijutsu Shinpojiumu (43. : 1992 : Tokio) Handōtai, Shūseki Kairo Gijutsu Dai 43kai Shinpojiumu (1992)

Highly Reliable Metal Oxide Thin Film Transistors for Flexible Devices

von Uraoka, Y.
Veröffentlicht in Pacific Rim Meeting on Electrochemical and Solid State Science (2020 : Online) (15.) Thin Film Transistors 15 (TFT 15) (2020)

Hot Carrier Phenomena in Oxide Thin-Film Transistors

von Tanaka, J.
Veröffentlicht in Pacific Rim Meeting on Electrochemical and Solid State Science (2020 : Online) (15.) Thin Film Transistors 15 (TFT 15) (2020)