Compatibility of POCI3 Gate Process with the Fabrication of Vertical 4H-SiC MOSFETs

von Watanabe, T.
Veröffentlicht in International Conference on Silicon Carbide and Related Materials (18. : 2019 : Kyōto) Silicon carbide and related materials 2019 (2020)

Evaluation of Plasma-Induced Damages to Thin Oxides During Polysilicon Gate Etching in Gas-Puff Chlorine Plasmas

von Tomohisa, S.
Veröffentlicht in Handōtai-Shūseki-Kairo-Gijutsu-Shinpojiumu (56 : 1999 : Osaka) 56.-Handōtai-Shuseki-Kairo-Gijutsu-Shinpojiumu-kōen-ronbunshū (1999)

Investigation on the Effect of Total Loss Reduction of HV Power Module by Using SiC-MOSFET Embedding SBD

von Tominaga, T.
Veröffentlicht in International Conference on Silicon Carbide and Related Materials (18. : 2019 : Kyōto) Silicon carbide and related materials 2019 (2020)

Highly Reliable Interconnect Integration of Cu and Low-k Organic Polymer Based on Fine CD Controls

von Nishioka, Y.
Veröffentlicht in Handōtai-Shūseki-Kairo-Gijutsu-Shinpojiumu (62 : 2002 : Tokio) Handōtai, Shuseki-Kairo-Gijutsu-62.-Shinpojiumu-kōen-ronbunshū (2002)

Crystalline Quality Evaluation of SiC p/n Column Layers Formed by Trench-Filling-Epitaxial Growth

von Adachi, K.
Veröffentlicht in International Conference on Silicon Carbide and Related Materials (18. : 2019 : Kyōto) Silicon carbide and related materials 2019 (2020)

Experimental Demonstration of Ruggedness in 13 kV SiC-IGBT

von Konishi, K.
Veröffentlicht in International Conference on Silicon Carbide and Related Materials (18. : 2019 : Kyōto) Silicon carbide and related materials 2019 (2020)

Effects of Grounding Bottom Oxide Protection Layer in Trench-Gate SiC-MOSFET by Tilted Al Implantation

von Fukui, Y.
Veröffentlicht in International Conference on Silicon Carbide and Related Materials (18. : 2019 : Kyōto) Silicon carbide and related materials 2019 (2020)

Performance Improvement of Trench-Gate SiC MOSFETs by Localized High-Concentration N-Type Ion Implantation

von Tanaka, R.
Veröffentlicht in International Conference on Silicon Carbide and Related Materials (18. : 2019 : Kyōto) Silicon carbide and related materials 2019 (2020)