Development of Ultra-fine Trench Isolation Using a Simulation Technique

von Murakami, T.
Veröffentlicht in Handōtai-Shūseki-Kairo-Gijutsu-Shinpojiumu (51 : 1996 : Tokio) 51. Handōtai Shuseki Kairo Gijutsu Shinpojiumu Kōen Ronbunshū (1996)

Excellent Si Epitaxial Layer Formation for Deep Sub-micron MOSFETs with Elevated Source/Drain Structures by UHV-CVD

von Nakahata, T.
Veröffentlicht in Handōtai-Shūseki-Kairo-Gijutsu-Shinpojiumu (55 : 1998 : Tokio) 55. Handōtai-Shuseki-Kairo-Gijutsu-Shinpojiumu-kōen-ronbunshū (1998)

Development of 150-mm 4H-SiC Substrates Using a High-Temperature Chemical Vapor Deposition Method

von Okamoto, T.
Veröffentlicht in International Conference on Silicon Carbide and Related Materials (18. : 2019 : Kyōto) Silicon carbide and related materials 2019 (2020)

Fast 4H-SiC Bulk Growth by High-Temperature Gas Source Method

von Tokuda, Y.
Veröffentlicht in International Conference on Silicon Carbide and Related Materials (18. : 2019 : Kyōto) Silicon carbide and related materials 2019 (2020)