Analytical model of the programming characteristics based on tunneling injection of MONOS memories with a variety of trap densities and proposal of a MONS memory

von Nomoto, K.
Veröffentlicht in Handōtai-Shūseki-Kairo-Gijutsu-Shinpojiumu (61 : 2001 : Tokio) Handōtai, Shuseki-Kairo-Gijutsu-61.-Shinpojiumu-kōen-ronbunshū (2001)

Narrow Distribution of Threshold Voltages in 4Mbit MONOS Memory Cell Arrays and its Impacts on Cell Operations

von Terano, T.
Veröffentlicht in Handōtai-Shūseki-Kairo-Gijutsu-Shinpojiumu (61 : 2001 : Tokio) Handōtai, Shuseki-Kairo-Gijutsu-61.-Shinpojiumu-kōen-ronbunshū (2001)