Transistor Level Reliability Assessment of Gate Oxide Defects by BTI Stress Nanoprobing

von Albert, Dave
Veröffentlicht in International Symposium for Testing and Failure Analysis (45. : 2019 : Portland, Or.) ISTFA 2019 (2019)

Residual EG Oxide in FinFET Analyses and Its Impact to Yield, Product Performance, and Transistor Reliability

von McGinnis, Pat
Veröffentlicht in International Symposium for Testing and Failure Analysis (45. : 2019 : Portland, Or.) ISTFA 2019 (2019)