Design, Fabrication and Characterization of 10kV/100A 4H-SiC PiN Power Rectifier

von Tao, M. L.
Veröffentlicht in Asia-Pacific Conference on Silicon Carbide and Related Materials (2019 : Peking) Materials for electronics: silicon carbide and related materials (2020)

A Study of the High-K Enhanced Depletion-JTE for Ultra-High Voltage SiC Power Device with Improved JTE-Dose Window

von Wen, Y.
Veröffentlicht in Asia-Pacific Conference on Silicon Carbide and Related Materials (2019 : Peking) Materials for electronics: silicon carbide and related materials (2020)