Collision experiment on highly ionized ions using vacuum spark source

Veröffentlicht 1982

Cross sections for one-electron capture by highly stripped ions of Be, B and C from H2 and Ar below 10 keV

Veröffentlicht 1982

High Current Drive CMOS Device Technologies using New Channel Materials

von Takagi, S.
Veröffentlicht in Handōtai, Shuseki-Kairo-Gijutsu-72.-Shinpojiumu-kōen-ronbunshū (2008)

Strained-Si/SiGe/Ge-On-Insulator CMOS Device Technologies

von Takagi, S.
Veröffentlicht in Handōtai-Shūseki-Kairo-Gijutsu-Shinpojiumu (69 : 2005 : Tokio) Handōtai, Shuseki-Kairo-Gijutsu-69.-Shinpojiumu-kōen-ronbunshū (2005)

Kyōkaisō-Seni-no-Kaimei-to-Seigyo-Kenkyūkai-kōen-ronbunshū : [March 13 - 16, 2007, Mimitsu, Hyuga, Miyazaki, Japan] = Proceedings of the 40th JAXA Workshop on "Investigation and...

Veröffentlicht 2008

Device technologies for III-V/Ge CMOS photonics

von Takenaka, M.
Veröffentlicht in Handōtai, Shuseki Kairo Gijutsu dai 77-kai Shinpojiumu kōen ronbunshū (2013)

Rapid pretreatment of environmental samples such as food by a microwave dehydration method

Veröffentlicht 1985

XUV radiation transfer through high-Z metal foil in a laser-produced plasma

von Mizui, J.
Veröffentlicht 1980

Development and Benchmarking of General Purpose User Code of EGS4

von Takagi, S.
Veröffentlicht in International Workshop on EGS4 (1 : 1997 : Tsukuba) Proceedings of the First International Workshop on EGS4 (1997)

Soft Tissues in the Patient Digitization for the Monte Carlo Radiotherapy Treatment Planning

von Hirai, M.
Veröffentlicht in International Workshop on EGS (3 : 2004 : Tsukuba) Proceedings of the Third International Workshop on EGS, August 2 - 6, 2004, KEK, Tsukuba, Japan (2005)

An EGS4 Monte Carlo User Code for Radiation Therapy Planning

von Funabiki, J.
Veröffentlicht 2001

(Invited) Physical Understanding of HfZrO2/Si FeFET Memory and Its Al Applications

von Takagi, S.
Veröffentlicht in Symposium "Semiconductor Process Integration" (13. : 2023 : Göteborg) Semiconductor Process Integration 13 (2023)

Comprehensive Understanding of Surface Roughness Limited Mobility in Unstrained- and Strained-Si MOSFETs by High Resolution TEM Measurements and Novel Characterization Scheme of Si...

von Zhao, Y.
Veröffentlicht in Handōtai, Shuseki-Kairo-Gijutsu-73.-Shinpojiumu-kōen-ronbunshū (2009)

Evaluation of Anisotropic Biaxial Stress in Extremely-Thin Body (100) Silicon- Germanium-on-Insulator p-Type Metal-Oxide-Semiconductor Field-Effect-Transistor by Oil-Immersion Rama...

von Maeda, Y.
Veröffentlicht in Symposium "Semiconductor Process Integration" (13. : 2023 : Göteborg) Semiconductor Process Integration 13 (2023)

Development of EGS4 User Codes for IMAGINE

von Takagi, S.
Veröffentlicht in International Workshop on EGS (3 : 2004 : Tsukuba) Proceedings of the Third International Workshop on EGS, August 2 - 6, 2004, KEK, Tsukuba, Japan (2005)

Calculation of Photon Fluence to Effective Dose Conversion Coeffcient from 1 MeV to 10GeV with Various Irradiation Geometry

von Sato, O.
Veröffentlicht in International Workshop on EGS4 (1 : 1997 : Tsukuba) Proceedings of the First International Workshop on EGS4 (1997)

HfZrO-Based Ferroelectric Devices for Lower Power AI and Memory Applications

von Takagi, S.
Veröffentlicht in Symposium on Semiconductor Process Integration (12. : 2021 : Online) Semiconductor Process Integration 12 (2021)

NEUTRON/PROTON DISCRIMINATION CHARACTERISTICS OF SPACEBORNE NEUTRON MONITORS

von Makihara, Y.
Veröffentlicht in Radiation detectors and their uses (2000)

NEUTRON ENERGY SPECTRUM ESTIMATION METHOD WITH IMFORMATION ON DIRECTION OF NEUTRON INCIDENCE AT SPACEBORNE NEUTRON MONITOR

von Makihra, Y.
Veröffentlicht 2001