The influence of Ge on the SiC nucleation on (111)Si surfaces

von Pezoldt, Jörg
Veröffentlicht in Silicon carbide and related materials (2001)

X-ray diffraction analysis of RTP-annealed thin ZnO films

Veröffentlicht in Thin films (1994)

Growth of 3C-(Si1-xC1-y)Gex+y layers on 4H-SiC by molecular beam epitaxy

Veröffentlicht in Silicon carbide and related materials 2004 (2005)

Lateral alignment of SiC dots on Si

Veröffentlicht in Physica status solidi / C (2004)

SiC-based FET for NOx gas sensing applications using InVOx metal oxides as a gate material

Veröffentlicht in Information technology and electrical engineering - devices and systems, materials and technologies for the future (2006)

Carbonization induced change of the polarity for MBE grown 3C-SiC/Si(111)

von Pezoldt, Jörg
Veröffentlicht in Silicon carbide and related materials (2001)

Germanium Incorporation in Silicon Carbide Epitaxial Layers Using Molecular Beam Epitaxy on 4H-SiC Substrates

von Pezoldt, Jörg
Veröffentlicht in European Conference on Silicon Carbide and Related Materials (12. : 2018 : Birmingham) Silicon carbide and related materials 2018 (2019)

Influence of thermal and oxidative treatments on the electronic surface properties of In2O3 films

von Berthold, Theresa
Veröffentlicht in Annual Meeting of the DPG (80. : 2016 : Regensburg) 80th Annual Meeting of the DPG and DPG-Frühjahrstagung (Spring Meeting) of the Condensed Matter Section (SKM) (2016)

Ge-modified Si(100) substrates for the growth of 3C-SiC(100)

Veröffentlicht in Applied physics letters (2006)

Nucleation control in FLASIC assisted short time liquid phase epitaxy by melt modification

Veröffentlicht in Silicon carbide and related materials 2004 (2005)

Phase selective growth and properties of rhombohedral and cubic indium oxide

Veröffentlicht in Applied physics letters (2006)

Simulation of the Si surface and the SiC/Si interface evolution during MBE deposition of C on Si

Veröffentlicht in Information technology and electrical engineering - devices and systems, materials and technologies for the future (2006)

High-resolution XRD investigations of the strain reduction in 3C-SiC thin films grown on Si (111) substrates

Veröffentlicht in Silicon carbide and related materials 2002 (2003)

Integration of In2O3 nanoparticle based ozone sensors with GaInN/GaN light emitting diodes

Veröffentlicht in Applied physics letters (2007)

3C-SiC:Ge alloys grown on Si (111) substrates by SSMBE

Veröffentlicht in Physica status solidi / C (2004)

Large-area fabrication of TiN nanoantenna arrays for refractory plasmonics in the mid-infrared

von Bagheri, Shahin
Veröffentlicht in Annual Meeting of the DPG (80. : 2016 : Regensburg) 80th Annual Meeting of the DPG and DPG-Frühjahrstagung (Spring Meeting) of the Condensed Matter Section (SKM) (2016)

The role of Ge predeposition temperature in the MBE epitaxy of SiC on silicon

Veröffentlicht in Physica status solidi / C (2004)