The Influence of Tri-Defects of Epitaxial Layers on the Performance of 4H-Sic Diodes

von Niu, Y. X.
Veröffentlicht in Asia-Pacific Conference on Silicon Carbide and Related Materials (2019 : Peking) Materials for electronics: silicon carbide and related materials (2020)

Advances for Enhanced GaN-Based HEMT Devices with p-GaN Gate

von Zhong, M.
Veröffentlicht in Asia-Pacific Conference on Silicon Carbide and Related Materials (2019 : Peking) Materials for electronics: silicon carbide and related materials (2020)

OPTIMIZATION OF INSULATION STRUCTURE FOR GIS BASIN INSULATOR WITH MULTI-OBJECTIVE ALGORITHM

von Zhu, S. L.
Veröffentlicht in IET International Conference on AC and DC Power Transmission (16. : 2020 : Online) 16th IET International Conference on AC and DC Power Transmission (ACDC 2020) ; Volume 2 of 3 (2021)