Evaluation of the Impact of Al Atoms on SiO2/ SiC Interface Property by Using 4H-SiC n*-Channel Junctionless MOSFET

von Shimura, H. Takeda, T. Hosoi, T.
Veröffentlicht in European Conference on Silicon Carbide and Related Materials (12. : 2018 : Birmingham) Silicon carbide and related materials 2018 (2019)