Blade Test in Atmospheric-Pressure Ar Gas to Characterize Bonded Interface Fabricated Using Atomic Diffusion Bonding

von Iemura, H.
Veröffentlicht in International Symposium on Semiconductor Wafer Bonding: Science, Technology and Applications (17. : 2023 : Göteborg) Semiconductor Wafer Bonding: Science, Technology and Applications 17 (2023)

Preferred Grain Orientation to Enhance Interdiffusion at Room Temperature in Atomic Diffusion Bonding: A Fundamental Study Using Ni and Cu Films

von Uomoto, M.
Veröffentlicht in International Symposium on Semiconductor Wafer Bonding: Science, Technology and Applications (17. : 2023 : Göteborg) Semiconductor Wafer Bonding: Science, Technology and Applications 17 (2023)

Crystal Lattice Rearrangement Occurred at Au/Ag Bonded Interface in Atomic Diffusion Bonding in Vacuum

von Goto, F.
Veröffentlicht in International Symposium on Semiconductor Wafer Bonding: Science, Technology and Applications (17. : 2023 : Göteborg) Semiconductor Wafer Bonding: Science, Technology and Applications 17 (2023)

Atomic Diffusion Bonding in Air Using Oxide Films

von Shimatsu, T.
Veröffentlicht in International Symposium on Semiconductor Wafer Bonding: Science, Technology and Applications (17. : 2023 : Göteborg) Semiconductor Wafer Bonding: Science, Technology and Applications 17 (2023)

Application of Low Temperature and Low Hydrogen Process to MRAM and FeRAM by using Pseudo Remote Plasma Chemical Vapor Deposition

von Shimazu, T.
Veröffentlicht in Handōtai, Shuseki-Kairo-Gijutsu-71.-Shinpojiumu-kōen-ronbunshū (2007)

LIGHT OUTPUT CHARACTERISTIC OF INORGANIC SCINTILLATORS TO INTERMEDIATE-ENERGY CHARGED PARTICLES

von Koba, Y.
Veröffentlicht in Radiation detectors and their uses (2007)