Cryogenic Characterization of NH3 Post Oxidation Annealed 4H-SiC Trench MOSFETs

von Rescher, J. Berens, G. Pobegen, T. Aichinger, G.
Veröffentlicht in European Conference on Silicon Carbide and Related Materials (12. : 2018 : Birmingham) Silicon carbide and related materials 2018 (2019)