Characterization of Annealing and Dopant Activation Processes Using Differential Hall Effect Metrology (DHEM)

von Joshi, A.
Veröffentlicht in ECS Meeting (239. : 2021 : Online) (11.) Silicon Compatible Emerging Materials, Processes, and Technologies for Advanced CMOS and Post-CMOS Applications 11 (2021)

(Invited) Highly Doped Si1-xGex Epitaxy in View of S/D Applications

von Rengo, G.
Veröffentlicht in Pacific Rim Meeting on Electrochemical and Solid State Science (2020 : Online) (9.) SiGe, Ge, and Related Compounds: Materials, Processing, and Devices 9 (2020)

Epitaxial Growth of Active Si on Top of SiGe Etch Stop Layer in View of 3D Device Integration

von Loo, R.
Veröffentlicht in Pacific Rim Meeting on Electrochemical and Solid State Science (2020 : Online) (16.) Semiconductor Wafer Bonding: Science, Technology and Applications 16 (2020)

Effect of Strain on the Epitaxy of B-Doped Si0.5Ge0.5 Source/Drain Layers

von Rengo, G.
Veröffentlicht in Symposium on Semiconductor Process Integration (12. : 2021 : Online) Semiconductor Process Integration 12 (2021)