Tunneling Effects in NH3 Annealed 4H-SiC Trench MOSFETs Grasser

von Berens, J.
Veröffentlicht in International Conference on Silicon Carbide and Related Materials (18. : 2019 : Kyōto) Silicon carbide and related materials 2019 (2020)

Evidence for an Abrupt Transition between SiOz and SiC from EELS and Ab Initio Modelling

von Cottom, J.
Veröffentlicht in European Conference on Silicon Carbide and Related Materials (12. : 2018 : Birmingham) Silicon carbide and related materials 2018 (2019)

First Principles Study of the Influence of the Local Steric Environment on the Incorporation and Migration of NO in a-SiO2

von Cottom, M. V. Mistrv J.
Veröffentlicht in European Conference on Silicon Carbide and Related Materials (12. : 2018 : Birmingham) Silicon carbide and related materials 2018 (2019)