Deep level transient spectroscopy of [Gamma]-ray induced defects in germanium

von Pearton, S. J.
Veröffentlicht 1980

The nature of the Ev + 0.23 eV and Ev + 0.38 eV gamma-induced centres in Ge

von Pearton, S. J.
Veröffentlicht 1982

Transient conductance spectroscopy measurements of defect states in [Gamma]-irradiated n-chanel silicon field effect transistors with possible [Gamma]-dosemeter applications

von Pearton, S. J.
Veröffentlicht 1981

Neutralisation of point defects in Ge and GaAs by hydrogen incorporation

von Pearton, S. J.
Veröffentlicht 1981

InP HBTs : growth, processing, and applications

Veröffentlicht 1995

Degradation mechanisms in III-V compound semiconductor devices and structures : symposium held April 17 - 18, 1990, San Francisco, California, U.S.A.

Veröffentlicht 1990

Oxygen, carbon, hydrogen and nitrogen in crystalline silicon : Symposium K

Veröffentlicht 1985

III-V electronic and photonic device fabrication and performance : symposium held April 12 - 15, 1993, San Francisco, California, U.S.A. ; [record of Symposium D1, entitled "III-...

Veröffentlicht 1993

Selected papers from the International Electron Devices and Materials Science (IEDMS) 2000 : December 2000, Taipei, Taiwan

Veröffentlicht 2002

Power semiconductor materials and devices : symposium held December 1-4, 1997, Boston, Massachusetts, U.S.A ; [Symposium E ... part of the 1997 MRS Fall Meeting]

Veröffentlicht 1998

E-Mode AlGaN/GaN HEMTs Using p-NiO Gates

von Chiang, C. C.
Veröffentlicht in Symposium "Wide-Bandgap Semiconductor Materials and Devices" (25. : 2024 : San Francisco, Calif.) Wide-Bandgap Semiconductor Materials and Devices 25 (2024)

(Invited) Total Dose Effects and Single Event Upsets During Radiation Damage of GaN and SiC

von Khachatrian, A.
Veröffentlicht in Symposium "Gallium Nitride and Silicon Carbide Power Technologies" (Veranstaltung : 11. : 2021 : Online) Gallium Nitride and Silicon Carbide Power Technologies 11 (2021)

Proceedings of the Symposium on Ion Implantation and Dielectrics for Elemental and Compound Semiconductors

Veröffentlicht 1990

Wide bandgap semiconductor materials and devices 15

Veröffentlicht 2014

Operation up to 225°C of NiO/ β-(Al0.21Ga0.79)2O3 /Ga2O3 Heterojunction Lateral Rectifiers

von Wan, H. H.
Veröffentlicht in Symposium "Wide-Bandgap Semiconductor Materials and Devices" (25. : 2024 : San Francisco, Calif.) Wide-Bandgap Semiconductor Materials and Devices 25 (2024)