Review and Detail Classification of Stacking Faults in 4H-SiC Epitaxial Layer by Mirror Projection Electron Microscopy

von Ohira, K.
Veröffentlicht in International Conference on Silicon Carbide and Related Materials (18. : 2019 : Kyōto) Silicon carbide and related materials 2019 (2020)

Observation of Dislocation Conversion in 4H-SIC Epitaxial Wafer by Mirror Projection Electron Microscopy

von Miyaki, T. Isshiki, T. Sato, M. Hasegawa, K. Ohira, K. Kobayashi, A.
Veröffentlicht in European Conference on Silicon Carbide and Related Materials (12. : 2018 : Birmingham) Silicon carbide and related materials 2018 (2019)

4H-SiC Epi-Ready Substrate Qualification by Using Mirror Electron Microscope Inspection System

von Hasegawa, M.
Veröffentlicht in International Conference on Silicon Carbide and Related Materials (18. : 2019 : Kyōto) Silicon carbide and related materials 2019 (2020)