(Invited) Fabrication Technique of Ferroelectric HfxZr1-xO2 Thin Films Using ALD- ZrO2 Nucleation Layers

von Onaya, T.
Veröffentlicht in Symposium "Semiconductor Process Integration" (13. : 2023 : Göteborg) Semiconductor Process Integration 13 (2023)

Study of SiO2 Interfacial Layer Growth during Fabrication Process of Ferroelectric HfxZr1-XO2-Based Metal-Ferroelectric Semiconductor

von Onaya, T.
Veröffentlicht in Symposium on Semiconductor Process Integration (12. : 2021 : Online) Semiconductor Process Integration 12 (2021)

Importance of Annealing Step on Dielectric Constant of ZrO2 Layer of MIM Capacitors with Al2O3/ZrO2 and ZrO2/Al2O3 Stack Structures

von Sawada, T.
Veröffentlicht in Symposium on Semiconductor Process Integration (12. : 2021 : Online) Semiconductor Process Integration 12 (2021)

Study of HfO2-Based High-k Gate Insulators for GaN Power Device

von Nabatame, T.
Veröffentlicht in Symposium on Semiconductor Process Integration (12. : 2021 : Online) Semiconductor Process Integration 12 (2021)

Improvement of Ferroelectricity and Fatigue Property of Thicker HfxZr1-xO2/ZrO3 Bi- layer

von Onaya, T.
Veröffentlicht in Pacific Rim Meeting on Electrochemical and Solid State Science (2020 : Online) Semiconductors, Dielectrics, and Metals for Nanoelectronics and Plasma Nanosciences (2020)