Present Status and Future Prospect of Widegap Semiconductor Switching Devices

von Okumura, H.
Veröffentlicht in Handōtai, Shuseki-Kairo-Gijutsu-73.-Shinpojiumu-kōen-ronbunshū (2009)

Numerical computation of thermoelectric and thermomagnetic effects

Veröffentlicht 1998

Comparison of Ranges for Al Implantations into 4H-SiC (0001) Using Channeled Ions and an Ion Energy in the Bethe-Bloch Region

von Mochizuki, K.
Veröffentlicht in European Conference on Silicon Carbide and Related Materials (12. : 2018 : Birmingham) Silicon carbide and related materials 2018 (2019)

COMPARING TRAINING EFFECTS ASSOCIATED WITH TWO SETS OF HRTF DATA ON AUDITORY LOCALIZATION PERFORMANTCE

von Kim, S.
Veröffentlicht in Audio Engineering Society (148. : 2020 : Online) 148th Audio Engineering Society International Convention 2020 (2020)

Effect of HCL on Surface Free Energy of SiC during CVD Trench Filling

von Mochizuki, K.
Veröffentlicht in European Conference on Silicon Carbide and Related Materials (12. : 2018 : Birmingham) Silicon carbide and related materials 2018 (2019)

Formation of Double Shockley Stacking Faults in Heavily Nitrogen Doped 4H-SiC Crystal with Reduction of Residual Stress around Scratch Damage

von Sugiyama, N.
Veröffentlicht in International Conference on Silicon Carbide and Related Materials (18. : 2019 : Kyōto) Silicon carbide and related materials 2019 (2020)

Application of Defect Conversion Layer by Solution Growth for Reduction of TSDs in 4H-SiC Bulk Crystals by PVT Growth

von Kato, N. Komatsu, T. Mitani, Y. Hayashi, H. Suo, T.
Veröffentlicht in European Conference on Silicon Carbide and Related Materials (12. : 2018 : Birmingham) Silicon carbide and related materials 2018 (2019)

Initiation of Shockley Stacking Fault Expansion in 4H-SiC P-i-N Diodes

von Okada, A.
Veröffentlicht in European Conference on Silicon Carbide and Related Materials (12. : 2018 : Birmingham) Silicon carbide and related materials 2018 (2019)

Crystalline Quality Evaluation of SiC p/n Column Layers Formed by Trench-Filling-Epitaxial Growth

von Adachi, K.
Veröffentlicht in International Conference on Silicon Carbide and Related Materials (18. : 2019 : Kyōto) Silicon carbide and related materials 2019 (2020)

Improved Field Effect Mobility in Si-Face 4H-SiC MOSFETS with a Deposited SiNx Interface Layer

von Kumazawa, T.
Veröffentlicht in European Conference on Silicon Carbide and Related Materials (12. : 2018 : Birmingham) Silicon carbide and related materials 2018 (2019)

A Study of CVD Growth Parameters to Fill 50-pm-Deep 4H-SiC Trenches

von Yoshida, S. Y. Ji, R. Kosugi, K. Kojima, K. Adachi, Y. Kawada, K. Mochizuki, A. Nagata, Y. Matsukawa, Y. Yonezawa, S.
Veröffentlicht in European Conference on Silicon Carbide and Related Materials (12. : 2018 : Birmingham) Silicon carbide and related materials 2018 (2019)

20 kV-Class Ultra-High Voltage 4H-SiC n-IE-IGBTs

von Koyama, A.
Veröffentlicht in International Conference on Silicon Carbide and Related Materials (18. : 2019 : Kyōto) Silicon carbide and related materials 2019 (2020)

Relationship between Temperature Dependencies of Resistivity and Hall Coefficient in Heavily Al-Doped 4H-SiC Epilayers

von Matsuura, H.
Veröffentlicht in European Conference on Silicon Carbide and Related Materials (12. : 2018 : Birmingham) Silicon carbide and related materials 2018 (2019)

Anomalous Temperature Dependence of the Hall Coefficient of Heavily Al-Doped 4H-SiC Epilayers in the Band Conduction Region

von Matsuura, H.
Veröffentlicht in International Conference on Silicon Carbide and Related Materials (18. : 2019 : Kyōto) Silicon carbide and related materials 2019 (2020)

Anomalous Conduction between the Band and Nearest-Neighbor Hopping Conduction Regions in Heavily Al-Doped p-Type 4H-SiC

von Hidaka, A.
Veröffentlicht in International Conference on Silicon Carbide and Related Materials (18. : 2019 : Kyōto) Silicon carbide and related materials 2019 (2020)