Structural Characterization of Prismatic Stacking Faults of Two Types of Carrot Defects in 4H-SiC Epi Wafers

von Sako, H.
Veröffentlicht in International Conference on Silicon Carbide and Related Materials (18. : 2019 : Kyōto) Silicon carbide and related materials 2019 (2020)

Review and Detail Classification of Stacking Faults in 4H-SiC Epitaxial Layer by Mirror Projection Electron Microscopy

von Ohira, K.
Veröffentlicht in International Conference on Silicon Carbide and Related Materials (18. : 2019 : Kyōto) Silicon carbide and related materials 2019 (2020)

Ultra-High Speed Direct Tunneling Memory (DTM) for System LSI8

von Tsunoda, K.
Veröffentlicht in Handōtai-Shūseki-Kairo-Gijutsu-Shinpojiumu (66 : 2004 : Tokio) Handōtai, Shuseki-Kairo-Gijutsu-66.-Shinpojiumu-kōen-ronbunshū (2004)

Observation of Dislocation Conversion in 4H-SIC Epitaxial Wafer by Mirror Projection Electron Microscopy

von Miyaki, T. Isshiki, T. Sato, M. Hasegawa, K. Ohira, K. Kobayashi, A.
Veröffentlicht in European Conference on Silicon Carbide and Related Materials (12. : 2018 : Birmingham) Silicon carbide and related materials 2018 (2019)

Monitoring of Substrate and Epilayer Surfaces by Mirror Projection Electron Microscope

von Kamata, I.
Veröffentlicht in European Conference on Silicon Carbide and Related Materials (12. : 2018 : Birmingham) Silicon carbide and related materials 2018 (2019)

4H-SiC Epi-Ready Substrate Qualification by Using Mirror Electron Microscope Inspection System

von Hasegawa, M.
Veröffentlicht in International Conference on Silicon Carbide and Related Materials (18. : 2019 : Kyōto) Silicon carbide and related materials 2019 (2020)