The Influence of Tri-Defects of Epitaxial Layers on the Performance of 4H-Sic Diodes

von Niu, Y. X.
Veröffentlicht in Asia-Pacific Conference on Silicon Carbide and Related Materials (2019 : Peking) Materials for electronics: silicon carbide and related materials (2020)

Advances for Enhanced GaN-Based HEMT Devices with p-GaN Gate

von Zhong, M.
Veröffentlicht in Asia-Pacific Conference on Silicon Carbide and Related Materials (2019 : Peking) Materials for electronics: silicon carbide and related materials (2020)

Inserting a AIN Electron Blocking Layer for InGaN/GaN Blue Light-Emitting Diodes

von Zuo, W. S.
Veröffentlicht in Asia-Pacific Conference on Silicon Carbide and Related Materials (2019 : Peking) Materials for electronics: silicon carbide and related materials (2020)

Low Defect Thick Homoepitaxial Layers Grown on 4H-SiC Wafers for 6500 V JBS Devices

von Niu, Y. X.
Veröffentlicht in Asia-Pacific Conference on Silicon Carbide and Related Materials (2018 : Peking) Semiconductors: silicon carbide and related materials (2019)