Carrier Transport Mechanisms in Ion Implanted and Highly-Doped p-Type 4H-SiC(Al)

von Parisini, A.
Veröffentlicht in European Conference on Silicon Carbide and Related Materials (12. : 2018 : Birmingham) Silicon carbide and related materials 2018 (2019)

Activation Energy for the Post Implantation Annealing of 10 19 cm-3 and 10 20 cm-3 Ton Implanted Al in 4H SiC

von Nipoti, R.
Veröffentlicht in European Conference on Silicon Carbide and Related Materials (12. : 2018 : Birmingham) Silicon carbide and related materials 2018 (2019)

3x 10/18 - 1 x 10/19 cm - 3 AI+ Ion Implanted 4H-SiC: Annealing Time Effect

von Nipoti, R.
Veröffentlicht in International Conference on Silicon Carbide and Related Materials (18. : 2019 : Kyōto) Silicon carbide and related materials 2019 (2020)

1300°C Annealing of 1x102° AI" Ion Implanted 3C-SiC

von Nipoti, R.
Veröffentlicht in European Conference on Silicon Carbide and Related Materials (12. : 2018 : Birmingham) Silicon carbide and related materials 2018 (2019)

Ion Implanted Phosphorous for 4H-SiC VDMOSFETSs Source Regions: Effect of the Post Implantation Annealing Time

von Nipoti, R.
Veröffentlicht in International Conference on Silicon Carbide and Related Materials (18. : 2019 : Kyōto) Silicon carbide and related materials 2019 (2020)