Electroceramics in Japan III : proceedings of the 19th Electronics Division Meeting of the Ceramic Society of Japan, Kawasaki, Japan, October 1999

Veröffentlicht 2000

Suppression of Anomalous Gate-Edge Leakage-Current in nMOSFET by Control of Ni Silicidation Region using Si+ Ion Implantation Technique

von Yamaguchi, T.
Veröffentlicht in Handōtai, Shuseki-Kairo-Gijutsu-71.-Shinpojiumu-kōen-ronbunshū (2007)

A Study of TiN Metal Gate Electrodes Formed by Divided CVD Technique for p-MISFETs

von Sakashita, S.
Veröffentlicht in Handōtai, Shuseki-Kairo-Gijutsu-70.-Shinpojiumu-kōen-ronbunshū (2006)