[alpha]-SiC-[beta]-SIC heteropolytype structures on Si (111)

Veröffentlicht in Applied physics letters (2005)

Self organisation and properties of Black Silicon

Veröffentlicht in Information technology and electrical engineering - devices and systems, materials and technologies for the future (2006)

Model for the thickness dependence of electron concentration in InN films

Veröffentlicht in Applied physics letters (2006)

Preperation of epitaxial templates for molecular beam epitaxy of III-nitrides on silicon substrates

Veröffentlicht in Physica status solidi / C (2002)

Origin of n-type conductivity in nominally undoped InN

Veröffentlicht in Information technology and electrical engineering - devices and systems, materials and technologies for the future (2006)

Raman studies of Ge-promoted stress modulation in 3C-SiC grown on Si(111)

Veröffentlicht in Applied physics letters (2005)

Evaluation of the influence of GaN and AlN as pseudosubstrates on the crystalline quality of InN layers

Veröffentlicht in Physica status solidi / C (2007)

Ge-modified Si(100) substrates for the growth of 3C-SiC(100)

Veröffentlicht in Applied physics letters (2006)

Cubic InN growth on sapphire (0001) using cubic indium oxide as buffer layer

Veröffentlicht in Applied physics letters (2007)

Structure of cubic polytype indium nitride layers on top of modified sapphire substrates

von Morales Sánchez, Francisco Miguel
Veröffentlicht in Physica status solidi / C (2008)

Simulation of the Si surface and the SiC/Si interface evolution during MBE deposition of C on Si

Veröffentlicht in Information technology and electrical engineering - devices and systems, materials and technologies for the future (2006)

Doping efficiency and segregation of Si in AlN grown by molecular beam epitaxy

Veröffentlicht in Physica status solidi / C (2006)

InN/In2O3 heterostructures

Veröffentlicht in Physica status solidi / C (2008)

The role of Ge predeposition temperature in the MBE epitaxy of SiC on silicon

Veröffentlicht in Physica status solidi / C (2004)

Electron transport properties of indium oxide - indium nitride metal-oxide-semiconductor heterostructures

von Lebedev, Vadim
Veröffentlicht in Physica status solidi / C (2008)