A Deformable Linear Dielectric Elastomer Actuator

von Wiranata, A.
Veröffentlicht in International Conference on Science and Technology (6. : 2020 : Online) Symposium of materials science and chemistry III (2021)

Self - Organization of Spatio - Temporal Structures in Monolayer - Excitable Medium Systems

von Yoneyama, M.
Veröffentlicht in Shinkinō Soshi Gijutsu Shimpojiumu (14. : 1995 : Tokio) Extended abstracts of 14th Symposium on Future Electron Devices (1995)

DIRECT ETCHING AND IMPLANTED METALIZATION IN SOFT MATTER Shibaura Institute of Technology, JAPAN and ^Kyushu University, JAPAN

von Ichikawa, K.
Veröffentlicht in International Conference on Miniaturized Systems for Chemistry and Life Sciences (21. : 2017 : Savannah, Ga.) 21st International Conference on Miniaturized Systems for Chemistry and Life Sciences (MicroTAS 2017) ; Volume 1 of 3 (2020)

Development of Electric Ballast Circuit for Excimer Lamp

von Maeda, S.
Veröffentlicht in Shōmei-Gakkai Kōen-ronbunshū, Heisei-16-nendo-(37.)-Shōmei-Gakkai-zenkoku-taikai (2004)

Coal properties of upgraded low-rank coals by hot water drying method

von Ohki, A.
Veröffentlicht in ICCS (9 : 1997 : Essen) Proceedings ICCS '97 ; Vol. 1 (1997)

Photo - Induced Memory Effect of an Organic Photoconductor and Its Use for Optical Information Processing

von Fujii, A.
Veröffentlicht in Shinkinō Soshi Gijutsu Shimpojiumu (13. : 1994 : Tokio) Extended abstracts of 13th Symposium on Future Electron Devices (1992)

Development of electronic ballast for neutral point type down inverter

von Kuratani, T.
Veröffentlicht in Shōmei-Gakkai Kōen-ronbunshū, Heisei-15-nendo-(36.)-Shōmei-Gakkai-zenkoku-taikai (2003)

Development of two FET neutral point type down inverter

von Adachi, S.
Veröffentlicht in Shōmei-Gakkai Kōen-ronbunshū, Heisei-15-nendo-(36.)-Shōmei-Gakkai-zenkoku-taikai (2003)

Development of neutral point type down inverter for compact lamp

von Okamura, Y.
Veröffentlicht in Shōmei-Gakkai Kōen-ronbunshū, Heisei-15-nendo-(36.)-Shōmei-Gakkai-zenkoku-taikai (2003)

Analysis of Radiation Tolerance in Field-Shield-Isolated SOI MOSFETs

von Hirano, Y.
Veröffentlicht in Handōtai-Shūseki-Kairo-Gijutsu-Shinpojiumu (56 : 1999 : Osaka) 56.-Handōtai-Shuseki-Kairo-Gijutsu-Shinpojiumu-kōen-ronbunshū (1999)

Bulk-Layout-Compatible 0.18 μm SOI-CMOS Technology using Body-Tied Partial Trench Isolation (PTI)

von Hirano, Y.
Veröffentlicht in Handōtai-Shūseki-Kairo-Gijutsu-Shinpojiumu (57 : 1999 : Tokio) 57.-Handōtai-Shuseki-Kairo-Gijutsu-Shinpojiumu-kōen-ronbunshū (1999)

0.35 µ m Large-Scale SOI Gate Array using Field Shield Isolation Technology

von Maeda, S.
Veröffentlicht in Handōtai-Shūseki-Kairo-Gijutsu-Shinpojiumu (52 : 1997 : Osaka) 52. Handōtai Shuseki Kairo Gijutsu Shinpojiumu Kōen Ronbunshū (1997)