Towards Controlled Transfer of (001) ß-Ga2O3 to (0001) 4H-SiC Substrates

von Liao, M. E.
Veröffentlicht in International Symposium on Semiconductor Wafer Bonding: Science, Technology and Applications (17. : 2023 : Göteborg) Semiconductor Wafer Bonding: Science, Technology and Applications 17 (2023)

Nanocrystalline Diamond Lateral Overgrowth for High Thermal Conductivity Contact to Unseeded Diamond Surface

von Francis, D.
Veröffentlicht in Symposium "Wide-Bandgap Semiconductor Materials and Devices" (25. : 2024 : San Francisco, Calif.) Wide-Bandgap Semiconductor Materials and Devices 25 (2024)

Operation up to 225°C of NiO/ β-(Al0.21Ga0.79)2O3 /Ga2O3 Heterojunction Lateral Rectifiers

von Wan, H. H.
Veröffentlicht in Symposium "Wide-Bandgap Semiconductor Materials and Devices" (25. : 2024 : San Francisco, Calif.) Wide-Bandgap Semiconductor Materials and Devices 25 (2024)