Polytype Control by Pretreatment of SiC Source Powder for 4H-SiC Single Crystal Growth

von Lee, J. W. Choi, J. G. Kim, B. K. Jang, S. K. Ko, M. O. Kyun, J. D. Seo, K. R. Ku, C. Y.
Veröffentlicht in European Conference on Silicon Carbide and Related Materials (12. : 2018 : Birmingham) Silicon carbide and related materials 2018 (2019)