Evaluation of Basal Plane Dislocation Behavior in the Epitaxial Layer on a 4H-SiC Wafer Fabricated by the Solution Growth Method

von Harada, K. Seki, K. Kusunoki, S.
Veröffentlicht in European Conference on Silicon Carbide and Related Materials (12. : 2018 : Birmingham) Silicon carbide and related materials 2018 (2019)

1.1K GATE SOCMOS GATE ARRAY FABRICATED BY LASER RECRYSTALLIZATION TECHNIQUE

von Kusunoki, S.
Veröffentlicht in Handōtai, Shūseki Kairo Gijutsu Shinpojiumu (28. : 1985 : Tokio) Handōtai, Shūseki Kairo Gijutsu Dai 28kai Shinpojiumu (1985)

A CMOS A/D Converter on Laser Recrystallized SOI with Controlled Crystal Growth Direction

von Kusunoki, S.
Veröffentlicht 1988