Comparison of Nonlinear Grading Approaches for ZnSSe/GaAs (001) Heterostructrures

von Ayers, J. E.
Veröffentlicht in ECS Meeting (237. : 2020 : Montréal) (21.) Wide-Bandgap Semiconductor Materials and Devices 21 (2020)

Recent Advances in the Modeling of ZnSySe1-y/ GaAs (001) Heterostructures with Application to Dislocation Sidewall Gettering

von Ayers, J.
Veröffentlicht in ECS Meeting (239. : 2021 : Online) (22.) Wide Bandgap Semiconductor Materials and Devices 22 (2021)

Experimental and Modeling Results for Dislocation Sidewall Gettering in ZnSSe/GaAs (001)

von Raphael, J.
Veröffentlicht in ECS Meeting (237. : 2020 : Montréal) (21.) Wide-Bandgap Semiconductor Materials and Devices 21 (2020)

Threading Dislocation Dynamics in ZnSSe Strained-Layer Superlattices

von Raphael, J.
Veröffentlicht in ECS Meeting (237. : 2020 : Montréal) (21.) Wide-Bandgap Semiconductor Materials and Devices 21 (2020)

Threading Dislocation Behavior in InGaAs/GaAs (001) Superlattice Buffer Layers

von Islam, M. T.
Veröffentlicht in Connecticut Microelectronics and Optoelectronics Consortium (28. : 2019 : New Haven, Conn.) Nanotechnology for electronics, photonics, biosensors, and emerging technologies (2021)

Threading Dislocations in Metamorphic Semiconductor Buffer Layers Containing Chirped Superlattices

von Islam, M. T.
Veröffentlicht in Connecticut Microelectronics and Optoelectronics Consortium (27. : 2018 : New Haven, Conn.) High performance logic and circuits for high-speed electronic systems (2019)

Interaction Length for Dislocations in Compositionally-Graded Heterostructures

von Cai, M.
Veröffentlicht in Connecticut Microelectronics and Optoelectronics Consortium (27. : 2018 : New Haven, Conn.) High performance logic and circuits for high-speed electronic systems (2019)

Optimization of Graded Buffer Layers for Metamorphic Semiconductor Devices

von Kujofsa, T.
Veröffentlicht in Connecticut Microelectronics and Optoelectronics Consortium (27. : 2018 : New Haven, Conn.) High performance logic and circuits for high-speed electronic systems (2019)

(Invited) Recent Advances in the Modeling of Strain Relaxation and Dislocation Dynamics in ZnSSe/GaAs (001) Heterostructures

von Ayers, J. E.
Veröffentlicht in ECS Meeting (237. : 2020 : Montréal) (21.) Wide-Bandgap Semiconductor Materials and Devices 21 (2020)