Electrically Active Levels Generated by Long Oxidation Times in 4H-SiC

von Knoll, L.
Veröffentlicht in European Conference on Silicon Carbide and Related Materials (12. : 2018 : Birmingham) Silicon carbide and related materials 2018 (2019)

Current-Mode Deep Level Spectroscopy of Vanadium-Doped HPSI 4H-SiC

von Alfieri, G.
Veröffentlicht in International Conference on Silicon Carbide and Related Materials (18. : 2019 : Kyōto) Silicon carbide and related materials 2019 (2020)

Über die Konstitution des Isochinolinrots

von Krantz, L. P.
Veröffentlicht 1910

Über die Konstitution des Isochinolinrots

von Krantz, L. P.
Veröffentlicht 1910

Improved SiO2/ 4H-SiC Interface Defect Density Using Forming Gas Annealing

von Wirths, S.
Veröffentlicht in European Conference on Silicon Carbide and Related Materials (12. : 2018 : Birmingham) Silicon carbide and related materials 2018 (2019)

Short Circuit Ruggedness of 600 V SiC Trench JFETs

von Sundaramoorthy, V.
Veröffentlicht in International Conference on Silicon Carbide and Related Materials (18. : 2019 : Kyōto) Silicon carbide and related materials 2019 (2020)

An Investigation into the Dynamic Behavior of 3.3kV MOSFETs Body Diode

von Mihaila, A.
Veröffentlicht in European Conference on Silicon Carbide and Related Materials (12. : 2018 : Birmingham) Silicon carbide and related materials 2018 (2019)

Dynamic Characterization and Robustness Test of High Voltage SiC MOSFETs

von Soler, V.
Veröffentlicht in European Conference on Silicon Carbide and Related Materials (12. : 2018 : Birmingham) Silicon carbide and related materials 2018 (2019)