ADVANTAGE OF μSR OVER TO OTHER EXPERIMENTAL TECHNIQUES: EXPECTATIONS TO THE UNIFIED FACILITY

von Kojima, K. M.
Veröffentlicht in Symposium Muon Science (2001 : Tsukuba) Tōgō-keikaku-myuon-kagaku-2001-shinpojiumu ; January 26 - 27, 2001, KEK, Tsukuba, Japan (2001)

Complementary character between low dimensional magnets and high-T superconductors probed by [My]SR, neutron, and optical response

von Kojima, K. M.
Veröffentlicht in Genken-KEK-Tōgō-Keikaku-Myuon-Kagaku-Kentōkai (2 : 2003 : Tsukuba) Kōen-gaiyōshū (2003)

Solution Grown Silicon Solar Cells

von IT0, K.
Veröffentlicht in Photovoltaic Science and Engineering Conference in Japan (1 : 1979 : Tokio) Proceedings of the 1st Photovoltaic Science and Engineering Conference in Japan (1980)

A procedure for analyzing three-point test data when one gene shows low penetrance

von Kojima, K.
Veröffentlicht 1965

[Besprechung von:] Kojima, K.: Japan and a Pacific Free Trade Area. London 1971

von Harrod, Roy Forbes
Veröffentlicht in The economic journal (1971)

Dry Etching Processes for TFT-LCD Manufacturing

von Saito, S.
Veröffentlicht in Handōtai-Shūseki-Kairo-Gijutsu-Shinpojiumu (46 : 1994 : Tokio) 46. Handōtai Shuseki Kairo Gijutsu Shinpojiumu Kōen Ronbunshū (1994)

NbN, Nb Double-Layered Base-Electrode Josephson Junctions

von KOSAKA, S.
Veröffentlicht in Conference on Solid State Devices (13 : 1981 : Tokio) Proceedings of the 13th Conference on Solid State Devices (1982)

Ba2-xKxBiO8 Tunnel Junctions on MgO Bicrystal Substrates

von Kojima, K.
Veröffentlicht in Shinkinō Soshi Gijutsu Shimpojiumu (14. : 1995 : Tokio) Extended abstracts of 14th Symposium on Future Electron Devices (1995)

CHARACTERISTICS OF THE COPPER CONCENTRATE RESIDUES AFTER OXIDATIVE LEACHING WITH CUPRIC CHLORIDE AND SODIUM CHLORIDE SOLUTION - DISSOLUTION OF HARMFUL ELEMENTS

von Koyama, K.
Veröffentlicht in International Copper Conference (9. : 2016 : Kobe) Proceedings of the 9th International Copper Conference ; volume 3: Hydrometallurgy (2016)

BaKBiO Tunnel Junctions and Their Application to SIS Mixers

von Kojima, K.
Veröffentlicht in Shinkinō Soshi Gijutsu Shimpojiumu (13. : 1994 : Tokio) Extended abstracts of 13th Symposium on Future Electron Devices (1992)

Effects of Nitrogen Impurity Concentration on Nitrogen-Vacancy Center Formation in 4H-SiC

von Narahara, T.
Veröffentlicht in International Conference on Silicon Carbide and Related Materials (18. : 2019 : Kyōto) Silicon carbide and related materials 2019 (2020)

Effect of the Difference in Electron Cutoff Energy on Surface Dose Calcu- lation in the Monte Carlo Linear Accelerator Simulation of Megavoltage Photon Beams

von Takeuchi, A.
Veröffentlicht in Proceedings of the Twentieth EGS User's Meeting in Japan, August 8 - 9, 2013, KEK, Tsukuba, Japan (2013)

Creation of Color Centers in SiC PN Diodes Using Proton Beam Writing

von Chiba, Y.
Veröffentlicht in European Conference on Silicon Carbide and Related Materials (12. : 2018 : Birmingham) Silicon carbide and related materials 2018 (2019)

A Study of CVD Growth Parameters to Fill 50-pm-Deep 4H-SiC Trenches

von Yoshida, S. Y. Ji, R. Kosugi, K. Kojima, K. Adachi, Y. Kawada, K. Mochizuki, A. Nagata, Y. Matsukawa, Y. Yonezawa, S.
Veröffentlicht in European Conference on Silicon Carbide and Related Materials (12. : 2018 : Birmingham) Silicon carbide and related materials 2018 (2019)

Optically Detected Magnetic Resonance Study of 3D Arrayed Silicon Vacancies in SiC pn Diodes

von Yamazaki, Y.
Veröffentlicht in International Conference on Silicon Carbide and Related Materials (18. : 2019 : Kyōto) Silicon carbide and related materials 2019 (2020)

Relationship between Temperature Dependencies of Resistivity and Hall Coefficient in Heavily Al-Doped 4H-SiC Epilayers

von Matsuura, H.
Veröffentlicht in European Conference on Silicon Carbide and Related Materials (12. : 2018 : Birmingham) Silicon carbide and related materials 2018 (2019)

Anomalous Conduction between the Band and Nearest-Neighbor Hopping Conduction Regions in Heavily Al-Doped p-Type 4H-SiC

von Hidaka, A.
Veröffentlicht in International Conference on Silicon Carbide and Related Materials (18. : 2019 : Kyōto) Silicon carbide and related materials 2019 (2020)

Anomalous Temperature Dependence of the Hall Coefficient of Heavily Al-Doped 4H-SiC Epilayers in the Band Conduction Region

von Matsuura, H.
Veröffentlicht in International Conference on Silicon Carbide and Related Materials (18. : 2019 : Kyōto) Silicon carbide and related materials 2019 (2020)