MOZZ, matrices over Z

von Koecher, M.
Veröffentlicht 1985

MOZZ, matrices over Z

Decoration of Al Implantation Profiles in 4H-SiC by Bevel Grinding and Dry Oxidation

von Kocher, M.
Veröffentlicht in European Conference on Silicon Carbide and Related Materials (12. : 2018 : Birmingham) Silicon carbide and related materials 2018 (2019)

Influence of Aluminum Compensation Effects in 4H-SiC on the Performance of VDMOS Transistors

von Schlichting, H.
Veröffentlicht in International Conference on Silicon Carbide and Related Materials (18. : 2019 : Kyōto) Silicon carbide and related materials 2019 (2020)

Influence of Shallow Pits and Device Design of 4H-SiC VDMOS Transistors on In-Line Defect Analysis by Photoluminescence and Differential Interference Contrast Mapping

von Kocher, M.
Veröffentlicht in International Conference on Silicon Carbide and Related Materials (18. : 2019 : Kyōto) Silicon carbide and related materials 2019 (2020)

Determination of Compensation Ratios of Al-Implanted 4H-SiC by TCAD Modelling of TLM Measurements

von Kocher, M.
Veröffentlicht in European Conference on Silicon Carbide and Related Materials (12. : 2018 : Birmingham) Silicon carbide and related materials 2018 (2019)

Raman Spectroscopy Characterization of Ion Implanted 4H-SiC

von Xu, Z. W.
Veröffentlicht in European Conference on Silicon Carbide and Related Materials (12. : 2018 : Birmingham) Silicon carbide and related materials 2018 (2019)