Effect of Growth Parameters on MoS2 Film Quality Deposited by Low-Temperature MOCVD Using I-Pr2dadmo(CO)3 and (t-C4H9)2S2

von Kirito, C.
Veröffentlicht in Symposium "Semiconductors, Dielectrics, and Metals for Nanoelectronics" (18. : 2021 : Online) Semiconductors, Dielectrics, and Metals for Nanoelectronics 18 (2021)