Effects of the Oxdation Procedure on the Dielectric Dissipation of the BST Capacitor

von Okudaira, T.
Veröffentlicht in Handōtai-Shūseki-Kairo-Gijutsu-Shinpojiumu (57 : 1999 : Tokio) 57.-Handōtai-Shuseki-Kairo-Gijutsu-Shinpojiumu-kōen-ronbunshū (1999)

Effects Oxidation Procedure on the Dielectric Relaxation of the BST Capacitor

von Okudaira, T.
Veröffentlicht in Handōtai-Shūseki-Kairo-Gijutsu-Shinpojiumu (58 : 2000 : Tokio) 58.-Handōtai-Shuseki-Kairo-Gijutsu-Shinpojiumu-kōen-ronbunshū (2000)

Effects of the Electrodes on the Electrical Properties of High- ε Capacitors

von Yutani, A.
Veröffentlicht in Handōtai-Shūseki-Kairo-Gijutsu-Shinpojiumu (56 : 1999 : Osaka) 56.-Handōtai-Shuseki-Kairo-Gijutsu-Shinpojiumu-kōen-ronbunshū (1999)

Impact of the Post-Anneal Procedure on the Dierectric Responce of the BST Capacitors

von Okudaira, T.
Veröffentlicht in Handōtai-Shūseki-Kairo-Gijutsu-Shinpojiumu (56 : 1999 : Osaka) 56.-Handōtai-Shuseki-Kairo-Gijutsu-Shinpojiumu-kōen-ronbunshū (1999)

Electrical Properties of BST Thin Film Capacitors Formed on in-situ O-doped Pt Electrodes

von Okudaira, T.
Veröffentlicht in Handōtai-Shūseki-Kairo-Gijutsu-Shinpojiumu (54 : 1998 : Tokio) 54. Handōtai Shuseki Kairo Gijutsu Shinpojiumu Kōen Ronbunshū (1998)

Depth Profile Analysis of Nickel Silicide Films using Time-of-Flight Secondary Ion Mass Spectrometry(TOF-SIMS)

von Watanabe, H.
Veröffentlicht in Handōtai, Shuseki-Kairo-Gijutsu-71.-Shinpojiumu-kōen-ronbunshū (2007)

Suppression of Anomalous Gate-Edge Leakage-Current in nMOSFET by Control of Ni Silicidation Region using Si+ Ion Implantation Technique

von Yamaguchi, T.
Veröffentlicht in Handōtai, Shuseki-Kairo-Gijutsu-71.-Shinpojiumu-kōen-ronbunshū (2007)