Formation of Double Shockley Stacking Faults in Heavily Nitrogen Doped 4H-SiC Crystal with Reduction of Residual Stress around Scratch Damage

von Sugiyama, N.
Veröffentlicht in International Conference on Silicon Carbide and Related Materials (18. : 2019 : Kyōto) Silicon carbide and related materials 2019 (2020)

Monitoring of Substrate and Epilayer Surfaces by Mirror Projection Electron Microscope

von Kamata, I.
Veröffentlicht in European Conference on Silicon Carbide and Related Materials (12. : 2018 : Birmingham) Silicon carbide and related materials 2018 (2019)

Development of 150-mm 4H-SiC Substrates Using a High-Temperature Chemical Vapor Deposition Method

von Okamoto, T.
Veröffentlicht in International Conference on Silicon Carbide and Related Materials (18. : 2019 : Kyōto) Silicon carbide and related materials 2019 (2020)

Fabrication of Bit patterned Media applying Nanoimprint and Directed self-assembly

von Kihara, N.
Veröffentlicht in Handōtai, Shuseki Kairo Gijutsu dai 77-kai Shinpojiumu kōen ronbunshū (2013)

Fast 4H-SiC Bulk Growth by High-Temperature Gas Source Method

von Tokuda, Y.
Veröffentlicht in International Conference on Silicon Carbide and Related Materials (18. : 2019 : Kyōto) Silicon carbide and related materials 2019 (2020)