Feasibility of Si Interfacial Layer Insertion for La2O3/Ge MOS Device

von Kakushima, K.
Veröffentlicht in Handōtai, Shuseki-Kairo-Gijutsu-72.-Shinpojiumu-kōen-ronbunshū (2008)

Highly Oriented Growth of Al;Sci.x N Ferroelectric Film on W Bottom Electrodes

von Tsai, S.
Veröffentlicht in Pacific Rim Meeting on Electrochemical and Solid State Science (2020 : Online) Semiconductors, Dielectrics, and Metals for Nanoelectronics and Plasma Nanosciences (2020)

Electrical Characteristics of Atomic Layer Deposited Y-Silicate Dielectrics

von Ohta, A.
Veröffentlicht in Pacific Rim Meeting on Electrochemical and Solid State Science (2020 : Online) Semiconductors, Dielectrics, and Metals for Nanoelectronics and Plasma Nanosciences (2020)

Ferroelectric HfO2 Capacitors for Varactor Application in GHz

von Lin, Y.
Veröffentlicht in Pacific Rim Meeting on Electrochemical and Solid State Science (2020 : Online) Semiconductors, Dielectrics, and Metals for Nanoelectronics and Plasma Nanosciences (2020)

Silicon compatible materials, processes, and technologies for advanced integrated circuits and emerging applications 4

Veröffentlicht 2014

Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 6

Veröffentlicht 2016