PATTERN DEFORMATION DURING SILICON EPITAXIAL GROWTH

von Masui, S.
Veröffentlicht in Handōtai, Shūseki Kairo Gijutsu Shinpojiumu (33. : 1987 : Tokio) Handōtai, Shūseki Kairo Gijutsu Dai 33kai Shinpojiumu (1987)

Novel Low Temperature (≥300°C) Annealing of Amorphous Si by Scanned High Energy (~2.5 MeV) Heavy Ion Beam

von NAKATA, J.
Veröffentlicht in Conference on Solid State Devices (13 : 1981 : Tokio) Proceedings of the 13th Conference on Solid State Devices (1982)

LIFETIME EVALUATION OF METALLIC CONTAMINATION ON Si WAFERS AND OXIDATION ENHANCEMENT BY CONTAMINATION

von Atsumi, J.
Veröffentlicht in Handōtai, Shūseki Kairo Gijutsu Shinpojiumu (33. : 1987 : Tokio) Handōtai, Shūseki Kairo Gijutsu Dai 33kai Shinpojiumu (1987)

Delamination of Thin Si and SiC Layers by The H*implantation

von Hara, T.
Veröffentlicht in Handōtai-Shūseki-Kairo-Gijutsu-Shinpojiumu (52 : 1997 : Osaka) 52. Handōtai Shuseki Kairo Gijutsu Shinpojiumu Kōen Ronbunshū (1997)