Integration of Copper Metallization with Bulk and SIMOX CMOS Device Technology

von Evans, D. R.
Veröffentlicht in Handōtai-Shūseki-Kairo-Gijutsu-Shinpojiumu (52 : 1997 : Osaka) 52. Handōtai Shuseki Kairo Gijutsu Shinpojiumu Kōen Ronbunshū (1997)

Zirconium Oxide Based Gate Dielectrics with Equivalent Oxide Thickness of Less than 1.0 nm and Performance of Submicron MOSFET using Nitride Gate Replacement Process

von Ueda, T.
Veröffentlicht in Handōtai-Shūseki-Kairo-Gijutsu-Shinpojiumu (58 : 2000 : Tokio) 58.-Handōtai-Shuseki-Kairo-Gijutsu-Shinpojiumu-kōen-ronbunshū (2000)