Characterization of Wetting of Deep Silica Nanoholes by Aqueous Solutions Using ATR-FTIR

von Vereecke, G.
Veröffentlicht in International Symposium on Ultra Clean Processing of Semiconductor Surfaces (15. : 2021 : Mecheln) Ultra clean processing of semiconductor surfaces XV (2021)

Si1-XGeX Selective Etchant for Gate-All-Around Transistors

von Harada, K.
Veröffentlicht in International Symposium on Ultra Clean Processing of Semiconductor Surfaces (15. : 2021 : Mecheln) Ultra clean processing of semiconductor surfaces XV (2021)

Challenges and Solutions of Replacement Metal Gate Patterning to Enable Gate-all-Around Device Scaling

von Oniki, Y.
Veröffentlicht in International Symposium on Ultra Clean Processing of Semiconductor Surfaces (15. : 2021 : Mecheln) Ultra clean processing of semiconductor surfaces XV (2021)