ANISOTROPIC ETCHING BY ANODE COUPLING

von Hijikata, I.
Veröffentlicht in Handōtai, Shūseki Kairo Gijutsu Shinpojiumu (22. : 1982 : Tokio) Handōtai, Shūseki Kairo Gijutsu Dai 22kai Shinpojiumu kōen ronbunshū (1982)

VACUUM UV HARDENING PROCESS

von Minato, M.
Veröffentlicht in Handōtai, Shūseki Kairo Gijutsu Shinpojiumu (35. : 1988 : Tokio) Handōtai, Shūseki Kairo Gijutsu Dai 35kai Shinpojiumu (1988)

DRY DEVELOPMENT OF PHOTORESIST

von Kanai, W.
Veröffentlicht in Handōtai, Shūseki Kairo Gijutsu Shinpojiumu (22. : 1982 : Tokio) Handōtai, Shūseki Kairo Gijutsu Dai 22kai Shinpojiumu kōen ronbunshū (1982)

Effects of Nitrogen Impurity Concentration on Nitrogen-Vacancy Center Formation in 4H-SiC

von Narahara, T.
Veröffentlicht in International Conference on Silicon Carbide and Related Materials (18. : 2019 : Kyōto) Silicon carbide and related materials 2019 (2020)

Enhancement of ODMR Contrasts of Silicon Vacancy in SiC by Thermal Treatment

von Yamazaki, Y. Chiba. 7.
Veröffentlicht in International Conference on Silicon Carbide and Related Materials (18. : 2019 : Kyōto) Silicon carbide and related materials 2019 (2020)

Near Infrared Photoluminescence of NcVsi Centers in High-Purity Semi-Insulating 4H-SiC Irradiated with Energetic Charged Particles

von Sato, S. I.
Veröffentlicht in International Conference on Silicon Carbide and Related Materials (18. : 2019 : Kyōto) Silicon carbide and related materials 2019 (2020)

Creation of Color Centers in SiC PN Diodes Using Proton Beam Writing

von Chiba, Y.
Veröffentlicht in European Conference on Silicon Carbide and Related Materials (12. : 2018 : Birmingham) Silicon carbide and related materials 2018 (2019)

Optically Detected Magnetic Resonance Study of 3D Arrayed Silicon Vacancies in SiC pn Diodes

von Yamazaki, Y.
Veröffentlicht in International Conference on Silicon Carbide and Related Materials (18. : 2019 : Kyōto) Silicon carbide and related materials 2019 (2020)